Fabrication and structure modulation of high-aspect-ratio porous GaAs through anisotropic chemical etching, anodic etching, and anodic oxidation
Fabrication and structure modulation of high-aspect-ratio porous GaAs through anisotropic chemical etching, anodic etching, and anodic oxidation
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DOI：
10.1016/j.electacta.2013.06.025
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发表时间：
2013-11
影响因子：
6.6
通讯作者：
S. Ono;Shunsuke Kotaka;H. Asoh
中科院分区：
文献类型：
--
作者：
S. Ono;Shunsuke Kotaka;H. Asoh
采用胶体晶体模板法、各向异性化学腐蚀法、局域阳极腐蚀法和各向同性阳极氧化法在（111）GaAs中制备了六方有序的深孔阵列。通过阳极偏压下电场强度增加的倒三角锥预坑的顶点，在HCl中阳极腐蚀诱导GaAs沿[1 1 1]晶向沿着的高纵横比三角孔阵列。在各向异性化学腐蚀过程中，GaAs中的三角形孔阵列变为三角形柱阵列。在弱酸性溶液中进行阳极氧化，由于平整效应，GaAs中的孔的形状可以由三角形调制为圆形，从而形成大孔GaAs层。通过优化化学腐蚀和阳极氧化工艺条件，可以得到三角形孔阵列、棱柱状柱阵列、圆形孔阵列和针状尖端阵列四种GaAs微结构。
The fabrication and modulation of hexagonally ordered arrays of deep pores in (1 1 1) GaAs were performed by combining colloidal crystal templating, anisotropic chemical etching, localized anodic etching and isotropic anodic oxidation. High-aspect-ratio triangular pore arrays of GaAs along the [1 1 1] crystallographic direction were induced by anodic etching in HCl through the apex of inverted triangular pyramid prepits, where electric field strength increased under anodic bias. The triangular pore arrays in GaAs changed to triangular pillar arrays during the anisotropic chemical etching. By applying anodic oxidation in a weak acid solution, the shape of pores in GaAs could be modulated from triangular to circular owing to the leveling effect, and a macroporous GaAs layer was formed. Four types of GaAs microstructure, that is, triangular pore arrays, prism-like pillar arrays, circular pore arrays and needle-like tip arrays, could be obtained by optimizing the chemical etching and anodization conditions.