Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers.
Additive GaN Solid Immersion Lenses for Enhanced Photon Extraction Efficiency from Diamond Color Centers.
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DOI：
10.1021/acsphotonics.3c00854
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发表时间：
2023-09-20
期刊：
影响因子：
7
通讯作者：
Strain, Michael J.
中科院分区：
文献类型：
--
作者：
Cheng, Xingrui;Wessling, Nils Kolja;Ghosh, Saptarsi;Kirkpatrick, Andrew R.;Kappers, Menno J.;Lekhai, Yashna N. D.;Morley, Gavin W.;Oliver, Rachel A.;Smith, Jason M.;Dawson, Martin D.;Salter, Patrick S.;Strain, Michael J.
从高折射率半导体基质晶体内部的光学活性固态自旋中心的有效光提取是将这些伪原子中心整合到更宽量子系统中的重要因素。在这里，我们报告增加荧光收集效率从激光写入的氮空位（NV）中心的块状金刚石促进微转移印刷GaN固体浸没透镜。NV中心的激光写入和微透镜结构的转印都与高空间分辨率兼容，从而实现面向未来可扩展系统开发的确定性制造路线。微透镜以非侵入性方式集成，因为它们被添加到非结构化金刚石表面的顶部并通过货车德瓦尔斯力结合。对于5 μm深度的发射器，我们发现使用数值孔径为NA = 0.95的空气物镜的荧光收集提高了约2倍，与模拟结果吻合良好。类似地，当使用NA = 0.5的物镜时，固体浸没透镜强烈增强光收集，显著提高NV中心发射的信噪比，同时在积分后保持NV的量子特性。
Effective light extraction from optically active solid-state spin centers inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centers in wider quantum systems. Here, we report increased fluorescent light collection efficiency from laser-written nitrogen-vacancy (NV) centers in bulk diamond facilitated by micro-transfer printed GaN solid immersion lenses. Both laser-writing of NV centers and transfer printing of micro-lens structures are compatible with high spatial resolution, enabling deterministic fabrication routes toward future scalable systems development. The micro-lenses are integrated in a noninvasive manner, as they are added on top of the unstructured diamond surface and bonded by van der Waals forces. For emitters at 5 μm depth, we find approximately 2× improvement of fluorescent light collection using an air objective with a numerical aperture of NA = 0.95 in good agreement with simulations. Similarly, the solid immersion lenses strongly enhance light collection when using an objective with NA = 0.5, significantly improving the signal-to-noise ratio of the NV center emission while maintaining the NV’s quantum properties after integration.
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