Giant spin-torque diode sensitivity in the absence of bias magnetic field.
Giant spin-torque diode sensitivity in the absence of bias magnetic field.
复制标题
无偏置磁场时的巨型自旋扭矩二极管灵敏度
DOI：
10.1038/ncomms11259
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发表时间：
2016-04-07
影响因子：
16.6
通讯作者：
Zeng Z
中科院分区：
文献类型：
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作者：
Fang B;Carpentieri M;Hao X;Jiang H;Katine JA;Krivorotov IN;Ocker B;Langer J;Wang KL;Zhang B;Azzerboni B;Amiri PK;Finocchio G;Zeng Z
基于自旋力矩二极管效应的微波探测器是新兴的自旋电子器件之一。通过利用电子的自旋和电荷，它们有可能克服半导体（肖特基）对应物的理论性能限制。然而，到目前为止，自旋二极管微波探测器的实际实现受到施加磁场的必要性的限制。在这里，我们展示了纳米磁性隧道结微波探测器，在室温下，在没有任何外部偏置场的情况下，在低输入功率（微瓦或更低）下表现出75，400 mV mW− 1的高检测灵敏度。这种灵敏度明显大于现有的肖特基二极管探测器和现有的自旋电子二极管。微磁模拟和测量揭示了注入锁定实现这种灵敏度性能的重要作用。这一机制为进一步提高自旋力矩二极管微波探测器的性能提供了一条途径。
Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to apply a magnetic field. Here, we demonstrate nanoscale magnetic tunnel junction microwave detectors, exhibiting high-detection sensitivity of 75,400 mV mW−1at room temperature without any external bias fields, and for low-input power (micro-Watts or lower). This sensitivity is significantly larger than both state-of-the-art Schottky diode detectors and existing spintronic diodes. Micromagnetic simulations and measurements reveal the essential role of injection locking to achieve this sensitivity performance. This mechanism may provide a pathway to enable further performance improvement of spin-torque diode microwave detectors.