Plasma-enhanced chemical vapor deposition of TiO2 thin films for dielectric applications
Plasma-enhanced chemical vapor deposition of TiO2 thin films for dielectric applications
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DOI：
10.1016/j.tsf.2006.06.010
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发表时间：
2006-12-05
期刊：
影响因子：
2.1
通讯作者：
Wolden, Colin A.
中科院分区：
文献类型：
--
作者：
Yang, Wenli;Wolden, Colin A.
采用等离子体增强化学气相沉积（PECVD）方法，以异丙醇钛钨（Ti（O-i-C3 H7）（4））和氧气为原料，制备了非晶TiO 2薄膜。沉积速率被发现是弱激活的，具有4.5 kJ/mol的表观活化能。沉积速率随当量比的增大而增大，随等离子体功率的增大而减小。这种对原子氧密度的依赖性与在其他金属氧化物PECVD系统中观察到的行为一致。金属-绝缘体-硅器件的制造，其特征在于使用电容-电压测量。随着薄膜厚度的增加，薄膜的表观介电常数从15增加到82。所观察到的变化是一致的界面SiO2层的形成。假设TiO 2/SiO2双层表现为两个串联电容器，则从电气测量中提取出本征TiO 2介电常数为82 +/- 10，界面SiO2层厚度为3 +/- 1 nm。(c)2006 Elsevier B. V.保留所有权利。
Amorphous TiO2 thin films were formed by plasma-enhanced chemical vapor deposition (PECVD) from mixtures of titanium W isopropoxide (Ti(O-i-C3H7)(4)) and oxygen. The deposition rate was found to be weakly activated, with an apparent activation energy of 4.5 kJ/mol. The deposition rate increased with equivalence ratio and decreased with plasma power. This dependence on atomic oxygen density was consistent with behavior observed in other metal oxide PECVD systems. Metal-insulator-silicon devices were fabricated, and characterized using capacitance-voltage measurements. The apparent dielectric constant of the TiO2 thin films increased from 15 to 82 with film thickness. The observed variations were consistent with the formation of an interfacial SiO2 layer. Assuming that a TiO2/SiO2 bilayer behaves as two capacitors in series, an intrinsic TiO2 dielectric constant of 82 +/- 10 and an interfacial SiO2 layer thickness of 3 +/- 1 nm were extracted from electrical measurements. (c) 2006 Elsevier B.V. All rights reserved.