Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells
Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells
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DOI：
10.1063/1.2234812
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发表时间：
2006-09
影响因子：
3.2
通讯作者：
S. Keller;C. Schaake;N. Fichtenbaum;C. Neufeld;YiFeng Wu;K. Mcgroddy;A. David;S. Denbaars;
中科院分区：
文献类型：
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作者：
S. Keller;C. Schaake;N. Fichtenbaum;C. Neufeld;YiFeng Wu;K. Mcgroddy;A. David;S. Denbaars;
采用全息光刻和反应离子刻蚀技术制备了GaN纳米柱和纳米条阵列，并在其上嵌入了InGaN闪烁GaN多量子威尔斯阱（MQW）。在优化的条件下，通过在NH3 scinN 2混合物中退火，成功地治愈了纳米结构的蚀刻相关损伤。与平面晶片相比，纳米图案化的样品表现出增强的发光。在非对称（101 <$5）反射周围记录的X射线倒易空间图显示，纳米柱和纳米条中的MQW在纳米图案化后弛豫，并采用比下面的GaN层更大的面内晶格常数。柱弛豫过程中没有可测量的影响，通常观察到在c-平面GaN上的多量子阱的斯托克斯位移，通过依赖于激发功率的光致发光（PL）测量评估。角分辨PL测量揭示了从纳米柱阵列中提取导模。
GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells (MQWs) were fabricated by holographic lithography and subsequent reactive ion etching. Etch related damage of the nanostructures was successfully healed through annealing in NH3∕N2 mixtures under optimized conditions. The nanopatterned samples exhibited enhanced luminescence in comparison to the planar wafers. X-ray reciprocal space maps recorded around the asymmetric (101¯5) reflection revealed that the MQWs in both nanopillars and nanostripes relaxed after nanopatterning and adopted a larger in-plane lattice constant than the underlying GaN layer. The pillar relaxation process had no measurable effect on the Stokes shift typically observed in MQWs on c-plane GaN, as evaluated by excitation power dependent photoluminescence (PL) measurements. Angular-resolved PL measurements revealed the extraction of guided modes from the nanopillar arrays.