Nitrogen compounds and their influence on diamond deposition in flames
Nitrogen compounds and their influence on diamond deposition in flames
复制标题
DOI：
10.1039/a808850k
复制
发表时间：
1999
影响因子：
3.3
通讯作者：
B. Atakan;M. Beuger;K. Kohse-Höinghaus
中科院分区：
文献类型：
--
作者：
B. Atakan;M. Beuger;K. Kohse-Höinghaus
含氮物质对金刚石薄膜生长的影响在微波和热丝化学气相沉积 (CVD) 系统中已得到充分证实。此处，在掺杂含氮物质 [N2、N2O、NH3、N(CH3)3] 的大气乙炔-氧气火焰中研究了金刚石 CVD。少量的这些添加剂会增加生长速度，而较高的浓度会导致优先的碳沉积。 N添加剂的生长有效量按照N2>N(CH3)3N2O>NH3的顺序降低了一个数量级以上。滞流几何中的气相化学模拟表明，添加剂向 HCN、NO 和 N 的转化与生长增强和薄膜质量下降密切相关。
The influence of nitrogen-containing species on the growth of diamond films is well-established in microwave and hot filament chemical vapour deposition (CVD) systems. Here, diamond CVD was investigated in atmospheric acetylene–oxygen flames doped with N-containing species [N2, N2O, NH3, N(CH3)3]. Small amounts of these additives increase the growth rate, while higher concentrations lead to preferential s carbon deposition. The growth-effective amount of N-additive decreases by more than an order of magnitude in the sequence N2>N(CH3)3N2O>NH3. Simulation of the gas phase chemistry in a stagnation-flow geometry shows that the transformation of the additives towards HCN, NO and N is strongly correlated with growth enhancement and film quality decrease.