Compensation of n‐type GaN
Compensation of n‐type GaN
复制标题
DOI：
10.1063/1.116828
复制
发表时间：
1996-11
影响因子：
4
通讯作者：
G. Yi;B. Wessels
中科院分区：
文献类型：
--
作者：
G. Yi;B. Wessels
研究了常压有机金属气相外延制备Se掺杂n型GaN的补偿问题。硒化氢是掺杂剂源。对于低分压，载流子浓度与 H2Se 压力成线性正比；对于高分压，载流子浓度与立方根成正比。 295 K 时载流子浓度高达 6×1019 cm−3。根据霍尔效应测量，即使对于重度 n 型材料，Se 掺杂的 GaN 也能得到高度补偿。使用低温光致发光研究了负责补偿的缺陷。在重掺杂层中观察到 15 K 时 3.447 eV 处的强受主相关跃迁。观察到的 GaN 中 Se 的掺杂依赖性归因于三电荷空位的补偿，这与最近关于 n 型材料中缺陷形成的理论计算一致。
Compensation in Se‐doped n‐type GaN prepared by atmospheric pressure metalorganic vapor phase epitaxy was studied. Hydrogen selenide was the dopant source. The carrier concentration is linearly proportional to the H2Se pressure for low partial pressures and proportional to the cube root at high partial pressures. Carrier concentrations as high as 6×1019 cm−3 at 295 K were achieved. From Hall‐effect measurements, the Se‐doped GaN was shown to be highly compensated even for heavily n‐type material. The defects responsible for the compensation were investigated using low‐temperature photoluminescence. A strong acceptor‐related transition at 3.447 eV at 15 K was observed in the heavily doped layer. The observed doping dependence of Se in GaN is attributed to compensation by triply charged vacancies which is consistent with recent theoretical calculations on defect formation in n‐type material.