Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes
Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes
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用介电泳排列的碳纳米管阵列溶液加工大面积场效应晶体管
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
S. Khondaker
中科院分区：
文献类型：
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作者：
P. Stokes;E. Silbar;Yashira Zayas;S. Khondaker
我们展示了解决方案可加工的大面积场效应晶体管（FET）从对齐阵列的碳纳米管（CNT）。市售的，悬浮在水溶液中的无表面活性剂的CNT使用交流介电泳技术在源极和漏极之间对准。在使用电击穿去除金属纳米管后，器件显示出p型行为，开关比高达102 ×104。测得的场效应迁移率高达123 cm 2/V s，这是三个数量级高于典型的溶液处理的有机FET器件。
We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain electrodes using ac dielectrophoresis technique. After removing the metallic nanotubes using electrical breakdown, the devices displayed p-type behavior with on-off ratios up to ∼2×104. The measured field effect mobilities are as high as 123 cm2/V s, which is three orders of magnitude higher than typical solution processed organic FET devices.