Hall effect in laser ablated Co2(Mn,Fe) Si thin films
Hall effect in laser ablated Co2(Mn,Fe) Si thin films
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DOI：
10.1088/0022-3727/42/8/084012
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发表时间：
2009-04-21
影响因子：
3.4
通讯作者：
Jakob, G.
中科院分区：
文献类型：
--
作者：
Schneider, H.;Vilanova, E.;Jakob, G.
采用脉冲激光沉积技术制备了Heusler化合物Co2MnSi和Co2FeSi薄膜。外延生长既可以直接在氧化镁(100)上实现，也可以在铬或铁缓冲层上实现。X射线和电子衍射结构分析表明，两种材料均为有序的L2(1)结构。体磁化强度用SQUID磁强计测量。对于半金属Heusler化合物，这些值符合斯莱特-鲍林规则。在直接生长在衬底上的薄膜上，测量了霍尔效应。法向霍尔效应几乎与温度无关，指向补偿费米面。反常贡献主要是由偏斜散射引起的。当价电子数从29(Mn)变为30(Fe)时，正常霍尔系数和反常霍尔系数都发生了显著的符号变化。
Pulsed laser deposition was employed to grow thin films of the Heusler compounds Co2MnSi and Co2FeSi. Epitaxial growth was realized both directly on MgO(1 0 0) and on a Cr or Fe buffer layer. Structural analysis by x-ray and electron diffraction shows for both materials the ordered L2(1) structure. Bulk magnetization was determined with a SQUID magnetometer. The values agree with the Slater-Pauling rule for half-metallic Heusler compounds. On the films grown directly on the substrate measurements of the Hall effect have been performed. The normal Hall effect is nearly temperature independent and points towards a compensated Fermi surface. The anomalous contribution is found to be dominated by skew scattering. A remarkable sign change in both normal and anomalous Hall coefficients is observed on changing the valence electron count from 29 (Mn) to 30 (Fe).