1-nm Spatial Resolution in Carrier Profiling of Ultrashallow Junctions by Scanning Spreading Resistance Microscopy
1-nm Spatial Resolution in Carrier Profiling of Ultrashallow Junctions by Scanning Spreading Resistance Microscopy
复制标题
通过扫描扩展电阻显微镜实现超浅结载流子分析的 1 纳米空间分辨率
DOI：
--
复制
发表时间：
2008
影响因子：
4.9
通讯作者：
A. Nishiyama
中科院分区：
文献类型：
--
作者：
Li Zhang;H. Tanimoto;K. Adachi;A. Nishiyama
最近，我们报道了显着提高空间分辨率的扫描扩展电阻显微镜（SSRM）在真空中进行测量。在本文中，我们证明了1纳米的空间分辨率的SSRM在载流子分布的3-D器件模拟比较。模拟结果表明，探测器的有效半径决定了超浅结轮廓的准确性。精确测量的结深度对应于0.5 nm的有效探针半径。我们把高分辨率归因于整个测量电路的寄生电阻的消除。应用于n型金属氧化物半导体场效应晶体管的失效分析，阐明了晕载流子分布对Vth滚降特性的影响。
Recently, we reported significantly improved spatial resolution in scanning spreading resistance microscopy (SSRM) by measuring in a vacuum. In this paper, we demonstrate the 1-nm spatial resolution of SSRM in carrier profiling by comparing with the 3-D device simulation. The simulation results show that the accuracy of ultrashallow-junction delineation depends on the effective radius of the probe. The precisely measured junction depth corresponds to an effective probe radius of 0.5 nm. We attribute the high resolution to the elimination of parasitic resistances of the whole measuring circuit. Application to failure analysis of n-type metal-oxide-semiconductor field-effect transistors clarified the impact of halo-carrier profiles on Vth-roll-off characteristics.