Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond
Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond
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DOI：
10.1063/1.4772985
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发表时间：
2012-12-17
影响因子：
4
通讯作者：
Koide, Y.
中科院分区：
文献类型：
--
作者：
Liu, J. W.;Liao, M. Y.;Koide, Y.
用原子层沉积技术在单晶氢化金刚石(H-金刚石)外延层上沉积了高k氧化物绝缘体(Al_2O_3和HfO_2)，温度低至120℃。用X射线光电子能谱表征了界面电子结构。根据核能级结合能和价带最大值，发现Al_2O_3/H-金刚石和HfO_2/H-金刚石异质结的价带偏移量分别为2.9+/-0.2 eV和2.6+/-0.2 eV。通过测量O1s能量损失谱，确定了Al_2O_3和HfO_2的带隙分别为7.2+/-0.2 eV和5.4+/-0.2 eV。Al_2O_3/H-金刚石和HfO_2/H-金刚石异质结均为II型交错能带结构，其导带偏移量分别为1.2+/-0.2 eV和2.7+/-0.2 eV。(C)2012年美国物理研究所。[http://dx.doi.org/10.1063/1.4772985]
High-k oxide insulators (Al2O3 and HfO2) have been deposited on a single crystalline hydrogenated diamond (H-diamond) epilayer by an atomic layer deposition technique at temperature as low as 120 degrees C. Interfacial electronic band structures are characterized by X-ray photoelectron spectroscopy. Based on core-level binding energies and valence band maximum values, valence band offsets are found to be 2.9 +/- 0.2 and 2.6 +/- 0.2 eV for Al2O3/H-diamond and HfO2/H-diamond heterojunctions, respectively. Band gaps of the Al2O3 and HfO2 have been determined to be 7.2 +/- 0.2 and 5.4 +/- 0.2 eV by measuring O 1s energy loss spectra, respectively. Both the Al2O3/H-diamond and HfO2/H-diamond heterojunctions are concluded to be type-II staggered band configurations with conduction band offsets of 1.2 +/- 0.2 and 2.7 +/- 0.2 eV, respectively. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772985]