Adsorption of germanium and of oxygen on cleaved InP(110) surfaces: Auger electron spectroscopy and measurements of work function and of surface photovoltage
Adsorption of germanium and of oxygen on cleaved InP(110) surfaces: Auger electron spectroscopy and measurements of work function and of surface photovoltage
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锗和氧在劈裂 InP(110) 表面上的吸附：俄歇电子能谱以及功函数和表面光电压的测量
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发表时间：
1985
期刊：
影响因子：
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通讯作者：
W. Mönch
中科院分区：
文献类型：
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作者：
L. Koenders;F. Bartels;H. Ullrich;W. Mönch
锗的沉积以及分子氧的化学吸附导致在裂开的InP（110）表面上形成耗尽层，最初表现出平坦的能带，并且在p型和n型掺杂样品上，费米能级最终被钉扎在价带顶Evs之上（1.11±0.02）eV。根据表面能带弯曲与Ge覆盖率曲线，化学吸附诱导的表面态的能量，即，它们的有效占据能级，对于表面施主被评估为Evs +1.08eV，对于表面受主被评估为Evs +1.15eV。与锗相反，化学吸附的氧在InP（110）上不引入表面偶极子，因此被结合而不是被吸附。未激发的分子氧与InP（110）表面的未受激和光子受激相互作用都导致磷损失。在黑暗中暴露1013 L氧气后，同时用氙弧灯的光照射时，磷的损失相当于1和1.65 InP l的消耗。
The deposition of germanium as well as the chemisorption of molecular oxygen cause the formation of depletion layers on cleave InP(110) surfaces initially exhibiting flat bands, and on p‐ as well as on n‐type doped samples the Fermi level is finally pinned (1.11±0.02) eV above the valence‐band top Evs. From the surface band bending vs Ge coverage curves the energies of the chemisorption‐induced surface states, i.e., their effective occupation levels, were evaluated as Evs +1.08 eV for the surface donors and Evs +1.15 eV for the surface acceptors. Chemisorbed oxygen, in contrast to germanium, introduces no surface dipoles on InP(110) and is thus incorporated rather than adsorbed. Both the unstimulated and the photon‐stimulated interactions of unexcited molecular oxygen with InP(110) surfaces result in a phosphorous loss. After exposures of 1013 L of oxygen in the dark and when simultaneously illuminated by the light of a xenon‐arc lamp the phosphorous loss is equivalent to a depletion of one and 1.65 InP l...