Thermoelectric properties of In- and Ga-doped spark plasma sintered ZnO ceramics
Thermoelectric properties of In- and Ga-doped spark plasma sintered ZnO ceramics
复制标题
DOI：
10.1016/j.ceramint.2021.05.101
复制
发表时间：
2021-05
影响因子：
5.2
通讯作者：
Ahrong Jeong;K. Suekuni;M. Ohtaki;B. Jang
中科院分区：
文献类型：
--
作者：
Ahrong Jeong;K. Suekuni;M. Ohtaki;B. Jang
在这项研究中，铟（In）和镓（Ga）掺杂的氧化锌（ZnO）陶瓷，[Zn（1-x-y）GaxIny]O（x = 0，0.02; y = 0，0.005，0.01，0.02），通过放电等离子烧结（SPS）在1423 K制备。进行晶体结构和微观结构分析，以确认掺杂剂的溶解度，并了解结晶相和各种组合物之间的相关性。结果表明，In和Ga的掺杂促进了Ga（x = 0.02; y = 0.005）的溶解度，在1046 K时获得了0.99 mW K-2 m-1的最高功率因数。此外，在340-530 K的热导率降低通过掺杂In和Ga。
In this study, indium (In)- and gallium (Ga)-doped zinc oxide (ZnO) ceramics, [Zn(1−x−y)GaxIny]O (x = 0, 0.02; y = 0, 0.005, 0.01, 0.02), were fabricated via spark plasma sintering (SPS) at 1423 K. Crystal structure and microstructural analyses were conducted to confirm the solubility of the dopants and understand the correlations between the crystallographic phases and the various compositions. It was confirmed that the solubility of Ga (x = 0.02; y = 0.005) was promoted by doping with In and Ga, and the highest power factor of 0.99 mW K−2m−1was acquired at 1046 K. Furthermore, the thermal conductivity at 340–530 K was reduced by doping with In and Ga.