X-ray characterization of CMOS imaging detector with high resolution for fluoroscopic imaging application
X-ray characterization of CMOS imaging detector with high resolution for fluoroscopic imaging application
复制标题
用于荧光镜成像应用的高分辨率 CMOS 成像探测器的 X 射线表征
DOI：
10.1016/j.nima.2013.05.140
复制
发表时间：
2013
影响因子：
1.4
通讯作者：
O. Kwon
中科院分区：
文献类型：
--
作者：
B. Cha;C. Kim;Seongchae Jeon;Ryun Kyung Kim;C. Seo;Keedong Yang;D. Heo;TaeBum Lee;Minseok Shin;J. H. Kim;O. Kwon
介绍了一种基于互补金属氧化物半导体（CMOS）有源像素传感器（APS）的高空间分辨率X射线成像探测器。在这项研究中，我们提出的X射线CMOS成像传感器已通过使用0.35 μm 1 Poly 4 Metal CMOS工艺制造。像素尺寸为100 µm×100 µm，像素阵列格式为24×96像素，可提供9.6 mm×2.4 mm的视场（FOV）。采用14.3位扩展计数模数转换器（ADC），内置面元模式，在减小面积的同时提高图像分辨率。铊掺杂的CsI（CsI：Tl）和Gd2O2S：Tb闪烁体屏被用作入射X射线到可见光光子的转换器。在不同X射线能量条件下，测量了样品的光学特性和X射线成像特性，如X射线对光响应随入射X射线照射剂量的变化、空间分辨率和X射线成像。测量结果表明，我们开发的CMOS为基础的X射线成像探测器具有荧光成像和锥形束计算机断层扫描（CBCT）成像应用的潜力。
This paper introduces complementary metal-oxide semiconductor (CMOS) active pixel sensor (APS)-based X-ray imaging detectors with high spatial resolution for medical imaging application. In this study, our proposed X-ray CMOS imaging sensor has been fabricated by using a 0.35 µm 1 Poly 4 Metal CMOS process. The pixel size is 100 µm×100 µm and the pixel array format is 24×96 pixels, which provide a field-of-view (FOV) of 9.6 mm×2.4 mm. The 14.3-bit extend counting analog-to digital converter (ADC) with built-in binning mode was used to reduce the area and simultaneously improve the image resolution. Both thallium-doped CsI (CsI:Tl) and Gd2O2S:Tb scintillator screens were used as converters for incident X-rays to visible light photons. The optical property and X-ray imaging characterization such as X-ray to light response as a function of incident X-ray exposure dose, spatial resolution and X-ray images of objects were measured under different X-ray energy conditions. The measured results suggest that our developed CMOS-based X-ray imaging detector has the potential for fluoroscopic imaging and cone-beam computed tomography (CBCT) imaging applications.