Defect controlled ultra high ultraviolet photocurrent gain in Cu-doped ZnO nanorod arrays: De-trapping yield
Defect controlled ultra high ultraviolet photocurrent gain in Cu-doped ZnO nanorod arrays: De-trapping yield
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DOI：
10.1063/1.4816444
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发表时间：
2013-07
影响因子：
4
通讯作者：
Sanjit Sarkar;D. Basak
中科院分区：
文献类型：
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作者：
Sanjit Sarkar;D. Basak
理解高光电流增益背后的机制对于实现用于光电探测器器件的高功能材料非常重要。在此，我们报告了一个非常高的紫外光电流增益为2.8 × 105的水热生长的Cu掺杂ZnO纳米棒阵列，这是两个数量级相比，未掺杂的样品。载流子在黑暗下的捕获和在照明下由Cu相关缺陷的去捕获是高增益的原因。在1.65 eV处的陷阱态归因于[{CuZn+（3d 10）}− − Zni+（4s 1）]0型缺陷。一个模型来解释在掺杂样品中的暗和光电流状态。
Understanding the mechanism behind high photocurrent gain is very important to realize a highly functional material for photodetector devices. Herein, we report a very high ultraviolet photocurrent gain of 2.8 × 105 in hydrothermally grown Cu-doped ZnO nanorod arrays which is two orders of magnitude higher as compared to the undoped sample. Trapping of carriers under dark and de-trapping them under illumination by Cu-related defects is responsible for high gain. The trap state at ∼1.65 eV is attributed to the [{CuZn+(3d10)}− − Zni+(4s1)]0 type of defects. A model is shown to explain the dark and photocurrent states in the doped samples.