An apodized DFB semiconductor laser realized by varying duty cycle of sampling Bragg grating and reconstruction-equivalent-chirp technology
An apodized DFB semiconductor laser realized by varying duty cycle of sampling Bragg grating and reconstruction-equivalent-chirp technology
复制标题
通过改变采样布拉格光栅占空比和重构等效线性调频技术实现变迹DFB半导体激光器
DOI:
10.1016/j.optcom.2009.11.078
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发表时间:
2010-05
影响因子:
2.4
通讯作者:
Li, Jingsi
中科院分区:
文献类型:
--
作者:
Shi, Yuechun;Li, Simin;Chen, Xiangfei;Jia, Linghui;Liu, Shengchun;Li, Jingsi
An apodized DFB semiconductor laser based on reconstruction-equivalent-chirp (REC) technology is proposed and investigated numerically. By changing the duty cycle of the sampling period, the magnitude of the equivalent index modulation is varied. Thus the equivalent apodization is introduced instead of an actual apodization. This novel DFB structure is advantageous in that it can enlarge the threshold gain difference and improve the mode stability compared with the conventional DFB laser. Moreover, the structure can be easily fabricated by standard holographic technology instead of high cost Electron-beam lithography.
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影响因子:
2.6
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通讯作者:
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影响因子:
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影响因子:
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