An apodized DFB semiconductor laser realized by varying duty cycle of sampling Bragg grating and reconstruction-equivalent-chirp technology

An apodized DFB semiconductor laser realized by varying duty cycle of sampling Bragg grating and reconstruction-equivalent-chirp technology
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通过改变采样布拉格光栅占空比和重构等效线性调频技术实现变迹DFB半导体激光器

DOI:
10.1016/j.optcom.2009.11.078
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发表时间:
2010-05
影响因子:
2.4
通讯作者:
Li, Jingsi
Li, Jingsi
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Shi, Yuechun;Li, Simin;Chen, Xiangfei;Jia, Linghui;Liu, Shengchun;Li, Jingsi

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提出了一种基于重构等效啁啾(REC)技术的变迹DFB半导体激光器,并对其进行了数值研究。通过改变采样周期的占空比,改变等效折射率调制的幅度。因此,引入等效变迹而不是实际变迹。与传统的DFB激光器相比,这种新型的DFB激光器结构的优点在于,它可以扩大阈值增益差,提高模式稳定性。而且,该结构可以很容易地通过标准的全息技术而不是高成本的电子束光刻来制作。
An apodized DFB semiconductor laser based on reconstruction-equivalent-chirp (REC) technology is proposed and investigated numerically. By changing the duty cycle of the sampling period, the magnitude of the equivalent index modulation is varied. Thus the equivalent apodization is introduced instead of an actual apodization. This novel DFB structure is advantageous in that it can enlarge the threshold gain difference and improve the mode stability compared with the conventional DFB laser. Moreover, the structure can be easily fabricated by standard holographic technology instead of high cost Electron-beam lithography.
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