Leakage mechanism in GaN and AlGaN schottky interfaces
Leakage mechanism in GaN and AlGaN schottky interfaces
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DOI：
10.1063/1.1762980
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发表时间：
2004-06-14
影响因子：
4
通讯作者：
Hasegawa, H
中科院分区：
文献类型：
--
作者：
Hashizume, T;Kotani, J;Hasegawa, H
基于详细的温度相关的电流-电压（I-V-T）测量，通过GaN和AlGaN肖特基界面的漏电流的机制进行了讨论。实验进行了比较，薄表面势垒模型的基础上，其中考虑到表面缺陷的影响计算。我们的模拟方法再现了GaN和AlGaN肖特基二极管的实验I-V-T特性，并给出了良好的拟合结果，在不同温度下的正向和反向偏压的GaN肖特基I-V曲线。目前的研究结果表明，无意的表面缺陷施主所造成的势垒变薄增强的隧穿输运过程，导致通过GaN和AlGaN肖特基接口的大的漏电流。(C)2004年，美国物理学会。
Based on detailed temperature-dependent current-voltage (I-V-T) measurements the mechanism of leakage currents through GaN and AlGaN Schottky interfaces is discussed. The experiments were compared to calculations based on thin surface barrier model in which the effects of surface defects were taken into account. Our simulation method reproduced the experimental I-V-T characteristics of the GaN and AlGaN Schottky diodes, and gave excellent fitting results to the reported Schottky I-V curves in GaN for both forward and reverse biases at different temperatures. The present results indicate that the barrier thinning caused by unintentional surface-defect donors enhances the tunneling transport processes, leading to large leakage currents through GaN and AlGaN Schottky interfaces. (C) 2004 American Institute of Physics.