PREPARATION AND CHARACTERIZATION OF SOL-GEL DERIVED EPITAXIAL AND ORIENTED PB(ZR0.52TI0.48)O-3 THIN-FILMS
PREPARATION AND CHARACTERIZATION OF SOL-GEL DERIVED EPITAXIAL AND ORIENTED PB(ZR0.52TI0.48)O-3 THIN-FILMS
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DOI：
10.1143/jjap.33.5147
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发表时间：
1994-09-01
期刊：
影响因子：
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通讯作者：
NAKAMURA, S
中科院分区：
文献类型：
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作者：
NASHIMOTO, K;NAKAMURA, S
由非水解聚合物前驱体制备外延取向 Pb(Zr0.52Ti0.48)O-3 (PZT) 薄膜。采用固相外延生长方法在 SrTiO3 (100) 和 MgO (100) 衬底上制备了单 (001) 取向的 PZT 薄膜。在蓝宝石 (0001) 基板上也观察到具有 (111) 择优取向的溶胶-凝胶 PZT 结晶。采用棱镜耦合方法对700℃下MgO（100）上结晶的PZT薄膜进行导波模式激发，验证折射率高达2.561。在 650 摄氏度下在导电 Nb-SrTiO3 (100) 衬底上结晶的外延 PZT 薄膜的介电常数和剩余极化在 10 kHz 和 15 μ C/cm(2) 下分别为 448。
Epitaxial and oriented Pb(Zr0.52Ti0.48)O-3 (PZT) thin films were prepared from nonhydrolyzed polymeric precursors. PZT thin films with a single (001) orientation were prepared on SrTiO3 (100) and MgO (100) substrates by solid-phase epitaxial growth. Crystallization of sol-gel PZT with a (111) preferred orientation was also observed on sapphire (0001) substrates. The guided wave modes were excited by a prism coupling method for PZT thin films crystallized on MgO (100) at 700 degrees C, and the verified refractive index was as high as 2.561. Dielectric constant and remnant polarization of epitaxial PZT thin films, crystallized on conductive Nb-SrTiO3 (100) substrates at 650 degrees C, were 448 at 10 kHz and 15 mu C/cm(2), respectively.