Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer
Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer
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DOI：
10.1088/0957-4484/22/33/335201
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发表时间：
2011-08
期刊：
影响因子：
3.5
通讯作者：
M. Jo;T. Mano;K. Sakoda
中科院分区：
文献类型：
--
作者：
M. Jo;T. Mano;K. Sakoda
本文报道了在GaAs（001）衬底上用液滴外延生长的GaAs量子点的电注入激光。使用改进的生长技术形成具有上级均匀性的高质量GaAs量子点，所述改进的生长技术涉及插入二维层、用于GaAs结晶的As通量的控制以及用高温退火覆盖薄AlGaAs层。量子点显示出超窄的发光，线宽为20 meV。在低温脉冲工作条件下，观察到了五层量子点激光二极管的基态激光输出。
We report electrically injected lasing in GaAs quantum dots (QDs) grown on GaAs(001) by droplet epitaxy. High-quality GaAs QDs with superior uniformity are formed using improved growth techniques involving the insertion of a two-dimensional layer, control of the As flux for GaAs crystallization, and thin AlGaAs layer capping with high-temperature annealing. The QDs show ultra-narrow luminescence with a linewidth of 20 meV. Ground-state lasing from a laser diode containing fivefold-stacked QD layers is observed at low temperature under pulsed operation.