Active nanocharacterization of nanofunctional materials by scanning tunneling microscopy

Active nanocharacterization of nanofunctional materials by scanning tunneling microscopy
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通过扫描隧道显微镜对纳米功能材料进行活性纳米表征

DOI:
10.1088/1468-6996/9/1/013003
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发表时间:
2008
影响因子:
5.5
通讯作者:
K. Sagisaka
K. Sagisaka
中科院分区:
材料科学2区
文献类型:
--
作者:
D. Fujita;K. Sagisaka

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摘要综述了扫描隧道显微技术在纳米加工和纳米表征中的应用进展。本文的主要重点是概述了利用STM尖端沉积和操纵纳米尺度结构的技术。首先,介绍了电压脉冲作用下STM尖端材料的转移。讨论了金属银纳米点和纳米线的高重复性制备方法。其机制被认为是由场增强扩散到尖端引起的自发点接触形成。通过应用z方向脉冲传输也被介绍。沿z方向的亚纳米位移脉冲形成点接触,可用于可重复的纳米点沉积。接下来,讨论了表面相的STM结构操纵的发现。研究表明,通过控制注入的载流子,可以对Si(001)表面上的超结构进行反向操纵。最后,提出了利用受控点接触的单原子沉积方法制备原子尺度一维量子约束系统的方法。由于其结合了纳米加工和纳米表征的能力,STM是探索纳米技术和纳米科学领域的有力工具。
Abstract Recent developments in the application of scanning tunneling microscopy (STM) to nanofabrication and nanocharacterization are reviewed. The main focus of this paper is to outline techniques for depositing and manipulating nanometer-scale structures using STM tips. Firstly, the transfer of STM tip material through the application of voltage pulses is introduced. The highly reproducible fabrication of metallic silver nanodots and nanowires is discussed. The mechanism is thought to be spontaneous point-contact formation caused by field-enhanced diffusion to the apex of the tip. Transfer through the application of z-direction pulses is also introduced. Sub-nanometer displacement pulses along the z-direction form point contacts that can be used for reproducible nanodot deposition. Next, the discovery of the STM structural manipulation of surface phases is discussed. It has been demonstrated that superstructures on Si(001) surfaces can be reverse-manipulated by controlling the injected carriers. Finally, the fabrication of an atomic-scale one-dimensional quantum confinement system by single-atom deposition using a controlled point contact is presented. Because of its combined nanofabrication and nanocharacterization capabilities, STM is a powerful tool for exploring the nanotechnology and nanoscience fields.
DOI: 10.1007/978-94-011-1812-5_2
发表时间: 1983-01
影响因子: 8.6
作者:
G. Binnig;H. Rohrer;C. Gerber;E. Weibel
通讯作者: G. Binnig;H. Rohrer;C. Gerber;E. Weibel