IR studies of SiCN films deposited by RF sputtering method
IR studies of SiCN films deposited by RF sputtering method
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DOI：
10.1016/j.jallcom.2009.08.009
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发表时间：
2009-11-13
影响因子：
6.2
通讯作者：
Xie, Erqing
中科院分区：
文献类型：
--
作者：
Chen, Zhiyong;Lin, Hongfeng;Xie, Erqing
以SiC靶为Si源，C源，氮气为反应气体，采用射频溅射法在Si（100）衬底上沉积了SiCN薄膜。利用X射线光电子能谱（XPS）和傅里叶变换红外光谱（FTIR）研究了SiCN薄膜的组成和成键结构，结果表明SiCN薄膜中形成了Si-C、Si-N、C = N和C N等主要成键。XPS分析表明，在700 ℃下沉积的SiCN膜的化学计量接近3：3：4。研究了薄膜中形成的化学键与衬底温度、氮含量和溅射功率的关系。分析表明，高衬底温度不利于氮进入SiCN薄膜。其次，在氮气浓度为36 at.%时，将改善氮元素并入SiCN膜中。另一方面，在高溅射功率和恒定的氮含量的影响下，氮分子容易分解，并可以有效地掺入到薄膜中。此外，原子力显微镜（AFM）被用来检查的SiCN薄膜的表面结构。(C)2009爱思唯尔有限公司版权所有。
Silicon carbon nitride (SiCN) films were deposited on Si(100) substrates by radio-frequency (RF) sputtering method using SiC target as Si, C source and nitrogen as reactant gas. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) were used to investigate the composition and bonding structures of the SiCN films, indicating that the main bonds such as Si-C, Si-N, C = N and C N were formed in the deposited SiCN films. Analysis of XPS indicated that the stoichiometry of the SiCN films deposited at 700 degrees C was close to 3:3:4. The dependence of the formed chemical bonds in the films on substrate temperature, nitrogen fraction and sputtering power has been studied. The analysis suggested that high substrate temperature is not in favor of the nitrogen incorporation into the SiCN films. Secondly, an optimal N-2/(N-2+Ar) (36 at.%) would improve the nitrogen element incorporation into the SiCN films. On the other hand, under the impact of high sputtering power with the invariable nitrogen fraction, nitrogen molecules were easily decomposed and can be incorporated into the films effectively. Furthermore, atomic force microscopy (AFM) was used to examine the surface structure of the SiCN films. (C) 2009 Elsevier B.V. All rights reserved.