Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs
Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTs
复制标题
使用硅-锗 HBT 的混合毫米波双推振荡器
DOI：
10.1109/tmtt.2002.807836
复制
发表时间：
2003
影响因子：
4.3
通讯作者：
F. Sinnesbichler
中科院分区：
文献类型：
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作者：
F. Sinnesbichler
推推设计已被证明是一种有效的方式来扩展振荡器应用的有源器件的可用频率范围。在本文中，推-推振荡器设计的基本原理进行了解释，并显示了各种可能性，以实现这一概念。讨论了几个使用SiGe HBT作为有源器件的混合毫米波推-推振荡器的例子。大信号建模的SiGe HBT使用垂直双极集成电路模型，以及定制的大信号模型的细节。在57和58 GHz时，微带谐振器振荡器的实测关键性能数据分别为+1 dBm的输出功率电平和-106和-108 dBm/Hz的单边带相位噪声系数（偏离载波1 MHz）。对于介质谐振器振荡器，最大输出功率为-8 dBm，最佳相位噪声为-112 dBc/Hz（输出功率为-14 dBm），以及500 MHz的机械调谐范围。
Push-push design has proven to be an efficient way to extend the usable frequency range of active devices for oscillator applications. In this paper, the basic principles of push-push oscillator design are explained and various possibilities to realize this concept are shown. Several examples of hybrid millimeter-wave push-push oscillators using SiGe HBTs as active devices are discussed. Details on large-signal modeling of the SiGe HBTs using both a vertical bipolar integrated-circuit model, as well as a customized large-signal model are given. Measured key performance data of microstrip resonator oscillators at 57 and 58 GHz are output power levels of +1 dBm and single-sideband phase-noise figures (1-MHz offset from carrier) of -106 and -108 dBm/Hz, respectively. For the dielectric-resonator oscillators, a maximum output power of -8 dBm and an optimum phase noise of -112 dBc/Hz (-14-dBm output power), as well as a mechanical tuning range of 500 MHz were measured.