Geant4 simulation of a filtered X-ray source for radiation damage studies
Geant4 simulation of a filtered X-ray source for radiation damage studies
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DOI：
10.1016/j.nima.2012.01.029
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发表时间：
2012-05
影响因子：
1.4
通讯作者：
M. Guthoff;O. Brovchenko;W. Boer;A. Dierlamm;T. Muller;A. Ritter;M. Schmanau;H. Simonis
中科院分区：
文献类型：
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作者：
M. Guthoff;O. Brovchenko;W. Boer;A. Dierlamm;T. Muller;A. Ritter;M. Schmanau;H. Simonis
Geant 4低能扩展已被用于模拟工业X射线管的X射线光谱，该X射线管具有用于以受控方式去除光谱的不确定低能部分的滤波器。使用硅漂移探测器精确测量的X射线光谱的结果进行了比较。此外，本文展示了如何在硅和二氧化硅层的电子器件的不同剂量率可以推导出从模拟。
Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes with filters for removing the uncertain low energy part of the spectrum in a controlled way. The results are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this paper shows how the different dose rates in silicon and silicon dioxide layers of an electronic device can be deduced from the simulations.