Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE
Electroluminescence properties of Eu-doped GaN-based red light-emitting diode by OMVPE
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DOI：
10.1002/pssa.200983467
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发表时间：
2010-06-01
影响因子：
2
通讯作者：
Fujiwara, Yasufumi
中科院分区：
文献类型：
--
作者：
Nishikawa, Atsushi;Kawasaki, Takashi;Fujiwara, Yasufumi
研究了铕（Eu）掺杂氮化镓基红色发光二极管（LED）的电致发光性能。在注入电流的情况下，GaN主体材料的能量成功向Eu3+离子转移，并在室温正常光照条件下用肉眼观察到Eu3+离子的红色发射。工作电压低至2.4 V。在621 nm波长处观察到主导峰，其强度随施加电压的增加而增加。在EL谱中，主峰旁的几个峰随着注入电流的增大而出现。在主峰上积分的光输出功率，作为注入电流的函数，在高注入电流区域表现出饱和行为。结果表明，在高注入电流下，外部量子效率仍然低于传统的氮化镓基蓝绿led。然而，这一结果提出了一种实现基于氮化镓的红色led的新方法，从而实现由红、绿、蓝氮化镓基led组成的单片器件，用于全彩显示或照明技术。(C) 2010 WILEY-VCH Verlag GmbH & Co., KGaA, Weinheim
We investigated the electroluminescence (EL) properties of europium (Eu)-doped GaN-based red light emitting diode (LED). Under current injection, the energy transfer from the GaN host material to Eu3+ ions successfully occurred and the red emission from Eu3+ ions was observed with naked eyes under normal lighting conditions at room temperature (RT). The operation voltage was as low as 2.4 V. The dominant peak was observed at a wavelength of 621 nm and its intensity increased with increasing applied voltage. The several peaks beside the main peak appeared with higher injected currents in the EL spectrum. The light output power, which was integrated over the main peak, as a function of injected current shows the saturated behaviour in the high injected current region. As a result, the external quantum efficiency was still lower than the conventional GaN-based blue and green LEDs at high injected current. However, this result suggests a novel way to realize GaN-based red LEDs, which leads to realize a monolithic device composed of red, green and blue GaN-based LEDs for full-colour display or lighting technology. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim