Thermally and Environmentally Stable Carrier Doping Using a Solution Method in Carbon Nanotube Films
Thermally and Environmentally Stable Carrier Doping Using a Solution Method in Carbon Nanotube Films
复制标题
使用溶液法在碳纳米管薄膜中进行热和环境稳定的载流子掺杂
DOI：
10.1143/apex.4.085102
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发表时间：
2011
影响因子：
2.3
通讯作者：
T.Takenobu
中科院分区：
文献类型：
--
作者：
Y.Sasaki;H.Okimoto;K.Yoshida;Y.Ono;Y.Iwasa;T.Takenobu
本文报道了四氟四氰基对奎诺二甲烷(F4TCNQ)掺杂的单壁碳纳米管(SWCNT)薄膜的热稳定性。用气相法和溶液法对碳纳米管进行了掺杂，并用气相色谱/质谱仪(GC/MS)和电阻测量对其热稳定性进行了表征。这些测量清楚地表明了F4 TCNQ的高热稳定性以及SWCNTs与掺杂剂之间强烈的电荷转移相互作用。结果，我们成功地观察到了高达150℃的良好的长期(超过500小时)热阻，这是该掺杂剂实际使用的足够稳定水平。
In the present paper, we report the thermal stability of a single-walled carbon nanotube (SWCNT) film that was doped using tetrafluorotetracyano-p-quinodimethane (F 4 TCNQ). The SWCNTs were doped using a vapor method and a solution method, and their thermostabilities were characterized using a gas chromatography/mass spectrometer (GC/MS) and resistance measurements. These measurements clearly demonstrated the high thermal stability of F 4 TCNQ and the strong charge-transfer interaction between the SWCNTs and the dopants. As a result, we successfully observed an excellent long-term (longer than 500 h) thermal resistance up to 150 C, which is a sufficient level of stability for the practical use of this dopant.