Cathodoluminescence properties of Pr, Tm co-implanted GaN thin films
Cathodoluminescence properties of Pr, Tm co-implanted GaN thin films
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DOI：
10.1364/ome.6.001692
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发表时间：
2016-05
影响因子：
2.8
通讯作者：
Xiaodan Wang;Yajuan Mo;Ming-Ming Yang-Ming;Xionghui Zeng;Jianfeng Wang;Ke Xu
中科院分区：
文献类型：
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作者：
Xiaodan Wang;Yajuan Mo;Ming-Ming Yang-Ming;Xionghui Zeng;Jianfeng Wang;Ke Xu
本文采用离子注入法制备了Pr和Tm共掺杂的GaN薄膜。在经过热退火处理的晶格恢复和离子激活后，温度依赖的阴极发光（CL）光谱被应用于研究发光性能。在室温下，随着Pr离子注入剂量的增加，Tm离子的蓝光发射强度与红外光发射强度之比减小，这是由于Pr离子与Tm离子之间的能量转移所致。此外，Tm的467 nm蓝光发射和Pr的528 nm绿色发射仅在低温下观察到。提出了一个模型来解释Pr和Tm共注入GaN薄膜的发光机理。
In this work, Pr and Tm co-doped GaN thin films were prepared by ion implantation. After a thermal annealing treatment for the lattice recovery and ions activation, temperature-dependent cathodoluminescence (CL) spectroscopy was applied to investigate the luminescent properties. At room temperature, the intensity ratio of blue emission to infrared emission of Tm ions was decreased as the implantation dose of Pr ions was increased, which is due to the energy transfer between Pr and Tm ions. In addition, the 467 nm blue emission of Tm and the 528 nm green emission of Pr were observed only at low temperature. A model was proposed to illuminate the light emission mechanism of Pr and Tm co-implanted GaN thin films.