Polaronic Hopping Conduction in Vanadium Phosphate Glasses
Polaronic Hopping Conduction in Vanadium Phosphate Glasses
复制标题
磷酸钒玻璃中的极化子跳跃传导
DOI：
10.1063/1.1660640
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发表时间：
1971
期刊：
影响因子：
--
通讯作者：
G. Rosenblatt
中科院分区：
文献类型：
--
作者：
M. Sayer;A. Mansingh;J. Reyes;G. Rosenblatt
在77°K ~ 420°K温度范围内，测量了80%V_2O_5：20%P_2O_5半导体玻璃的电导率和介电性能随频率的变化关系。直流结果与极化子跳跃传导模型的拟合导致在77°K时由于无序引起的激活能ΔW=0.09 eV，光学声子能量为0.053 eV，而计算的米勒-亚伯拉罕能量约为0.12 eV。交流电导率的真实的部分和虚部根据幂律σ=Aωs随频率增加，其中s=0.85至0.95，并且发现只有当弛豫时间的宽分布存在时，介电行为才可以用德拜型弛豫行为来描述。结果表明，是一致的交流导电模型通常适用于杂质掺杂的宽带半导体，和直流和交流电导率的温度依赖性之间的差异归因于在玻璃中的位置能量的分布。
Conductivity and dielectric properties of semiconducting glass of composition 80% V2O5:20% P2O5 have been measured as a function of frequency from dc to 3.6 GHz over a temperature range from 77°K to 420°K. A fit of the dc results to a model of polaronic hopping conduction leads to an activation energy due to disorder ΔW=0.09 eV at 77°K and an optical phonon energy of 0.053 eV compared to a calculated Miller‐Abrahams energy of approximately 0.12 eV. The real and imaginary parts of the ac conductivity are shown to increase with frequency according to power law σ=Aωs, where s=0.85 to 0.95, and it is found that the dielectric behavior can be described by a Debye‐type relaxation behavior only if a broad distribution of relaxation times exists. The results are shown to be consistent with a model of ac conduction normally applied to impurity‐doped broad‐band semiconductors, and differences between the temperature dependence of the dc and ac conductivity are attributed to a distribution of site energies in the gl...