Three terminal double barrier resonant tunneling devices with the base contact to the quantum well
Three terminal double barrier resonant tunneling devices with the base contact to the quantum well
复制标题
基极接触量子阱的三端双势垒谐振隧道器件
DOI：
10.1109/smicnd.1997.651566
复制
发表时间：
1997
期刊：
影响因子：
--
通讯作者：
L. Kaufmann
中科院分区：
文献类型：
--
作者：
M. Lepsa;T. van de Roer;J. Kwaspen;E. Smalbrugge;W. van der Vleuten;L. Kaufmann
利用砷化镓/砷化镓材料体系制备了基极与量子阱接触的三个终端（3T）双势垒共振隧道（DBRT）器件。该技术解决方案基于高选择性蚀刻工艺，以达到极薄量子阱的平面，随后，使用非合金Ti/Pt/Au金属化方案获得肖特基基触点。直流和交流电测量表明，基极接触位于DBRT结构的量子阱上，基极电压调制集电极电流。结果表明，这些器件的电学特性扩大了研究DBRT结构的可能性，并在高速电子领域提出了重要的应用。
Three terminal (3T) Double Barrier Resonant Tunneling (DBRT) devices having the base contact to the quantum well have been fabricated from GaAs/AlAs material system. The technological solution is based on high selective etching processes to reach the plane of the very thin quantum well on which, subsequently, a Schottky base contact is obtained using a nonalloyed Ti/Pt/Au metallization scheme. DC and AC electrical measurements demonstrate that the base contact lies on the quantum well of the DBRT structure and the base voltage modulates the collector current. It is shown that the electrical characteristics of these devices enlarge the possibilities of investigations on DBRT structures and suggest important applications in high-speed electronics.