Residual stress analysis in chemical-vapor-deposition diamond films
Residual stress analysis in chemical-vapor-deposition diamond films
复制标题
DOI：
10.1063/1.3139083
复制
发表时间：
2009-05
影响因子：
4
通讯作者：
T. Liu;H. Pinto;P. Brito;L. A. Sales;D. Raabe
中科院分区：
文献类型：
--
作者：
T. Liu;H. Pinto;P. Brito;L. A. Sales;D. Raabe
采用直流化学气相沉积法沉积了三组不同甲烷浓度、基底材料和膜厚的金刚石薄膜。通过X射线衍射测量应力。该材料显示出由于热膨胀不匹配而在基板界面处产生压应力。缺陷影响的增加导致压应力下降，并在生长前沿形成拉应力。
Three groups of diamond films were deposited with variations in methane concentration, substrate material, and film thickness by a direct current chemical-vapor-deposition method. Stresses were measured by x-ray diffraction. The material reveals compressive stresses at the substrate interfaces due to thermal expansion mismatch. Increasing influence of defects leads to a drop in the compressive stresses and the formation of tensile stresses toward the growth front.