On the strain in n-type GaN
On the strain in n-type GaN
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DOI：
10.1063/1.3647772
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发表时间：
2011-10
影响因子：
4
通讯作者：
Jinqiao Xie;S. Mita;Lindsay K. Hussey;A. Rice;J. Tweedie;J. Lebeau;R. Collazo;Z. Sitar
中科院分区：
文献类型：
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作者：
Jinqiao Xie;S. Mita;Lindsay K. Hussey;A. Rice;J. Tweedie;J. Lebeau;R. Collazo;Z. Sitar
结果表明，Ge具有相同的效果，Si的应变演化的n型GaN中测量的X射线衍射。位错倾斜，这会导致在n型GaN的拉伸应变，清楚地观察到通过透射电子显微镜在外延生长过程中引入Ge掺杂。这一结果是由费米能级效应模型，表明位错倾斜，由于通过Ga空位攀登过程解释。因此，位错倾角不依赖于掺杂剂种类。
It was demonstrated that Ge has the same effect as Si on the strain evolution in n-type GaN as measured by x-ray diffraction. Dislocation inclination, which causes tensile strain in n-type GaN, was clearly observed by transmission electron microscopy where Ge doping was introduced during epitaxial growth. This result is explained by the Fermi level effect model that indicates dislocation inclination due to the climbing process through Ga vacancies. Therefore, there is no dependence of dislocation inclination on dopant species.