Ta2O5 thin films with exceptionally high dielectric constant
Ta2O5 thin films with exceptionally high dielectric constant
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DOI：
10.1063/1.123854
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发表时间：
1999-04
影响因子：
4
通讯作者：
Jun Lin;Nakabayasi Masaaki;A. Tsukune;M. Yamada
中科院分区：
文献类型：
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作者：
Jun Lin;Nakabayasi Masaaki;A. Tsukune;M. Yamada
我们已经获得了五氧化二钽（Ta 2 O 5）薄膜具有非常高的优势取向。Ta 2 O 5薄膜具有90-110的非常高的介电常数，并且使用这些Ta 2 O 5薄膜作为介电层的电容器显示出高电容和低漏电流，满足新一代存储器件的要求。
We have achieved tantalum pentoxide (Ta2O5) thin films with extremely highly predominant 〈001〉 orientation. The Ta2O5 thin films have an exceptionally high dielectric constant of 90–110, and capacitors using these Ta2O5 films as a dielectric layer show the high capacitance and low leakage current meeting the requirements for the new generation of memory devices.