Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication
Tehrahertz CMOS Design for Low-Power and High-Speed Wireless Communication
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DOI：
10.1587/transele.e98.c.1091
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发表时间：
2015-12
期刊：
影响因子：
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通讯作者：
M. Fujishima;S. Amakawa;K. Takano;K. Katayama;T. Yoshida
中科院分区：
文献类型：
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作者：
M. Fujishima;S. Amakawa;K. Takano;K. Katayama;T. Yoshida
最近越来越多关于工作在太赫兹（≥ 0.1 THz）频率的 CMOS 集成电路的报道。然而，设计环境和技术尚未像 RF CMOS 电路那样完善。本文回顾了作者在低功耗高速无线通信太赫兹 CMOS 设计方面取得的最新进展，包括器件表征和建模技术。推出了 11 Gb/s 和 19 pJ/bit 的低功耗高速无线数据传输以及 7 pJ/bit 超低功耗收发器芯片组。关键词: 高频电路设计, CMOS, 毫米波, 太赫兹
There have recently been more and more reports on CMOS integrated circuits operating at terahertz (≥ 0.1 THz) frequencies. However, design environments and techniques are not as well established as for RF CMOS circuits. This paper reviews recent progress made by the authors in terahertz CMOS design for low-power and high-speed wireless communication, including device characterization and modeling techniques. Low-power high-speed wireless data transfer at 11 Gb/s and 19 pJ/bit and a 7-pJ/bit ultra-low-power transceiver chipset are presented. key words: high-frequency circuit design, CMOS, millimeter wave, terahertz