Dependence of stimulated scattering in semiconductor microcavities on pump power, angle, and energy
Dependence of stimulated scattering in semiconductor microcavities on pump power, angle, and energy
复制标题
半导体微腔中受激散射对泵浦功率、角度和能量的依赖性
DOI：
10.1103/physrevb.68.115325
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发表时间：
2003
影响因子：
3.7
通讯作者：
J. Roberts
中科院分区：
文献类型：
--
作者：
R. Butté;M. S. Skolnick;D. Whittaker;D. Bajoni;J. Roberts
研究了InGaAs/GaAs/AlGaAs微腔中受激极化激元-极化激元散射与泵浦功率、泵浦角度和泵浦能量的关系。我们表明，与以前的信念有没有“魔角”连续波条件下的受激散射，该过程被证明是一个相当普遍的现象，发生在很宽的泵浦角。与光学参量振荡器的行为密切的类比被发现，但也只能解释的准粒子的极化激元性质列入方面。第一个物理解释为什么光参量振荡器图片导致观察到的信号功率的平方根依赖于激光强度提供。激发的受激散射过程的调谐曲线的不对称性的框架下的下极化激元分支的重整化解释。
The dependence of stimulated polariton-polariton scattering in InGaAs/GaAs/AlGaAs microcavities on pump power, angle, and energy is investigated. We show that contrary to much previous belief there is no "magic angle" for stimulated scattering under continuous-wave conditions, the process being shown to be a rather general phenomenon, occurring over a wide range of pump angles. Close analogies with optical parametric oscillator behavior are found, but also aspects which can only be explained by inclusion of the polariton nature of the quasiparticles. The first physical explanation of why the optical parametric oscillator picture leads to the observed square root dependence of signal power on laser intensity is provided. The asymmetric nature of the tuning curve for excitation of the stimulated scattering process is explained in the framework of the renormalization of the lower polariton branch.