In situ observation of grain-boundary development from a facet-facet groove during solidification of silicon
In situ observation of grain-boundary development from a facet-facet groove during solidification of silicon
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DOI：
10.1016/j.actamat.2018.04.062
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发表时间：
2018-07
期刊：
影响因子：
9.4
通讯作者：
Kuan-Kan Hu;K. Maeda;H. Morito;Keiji Shiga;K. Fujiwara
中科院分区：
文献类型：
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作者：
Kuan-Kan Hu;K. Maeda;H. Morito;Keiji Shiga;K. Fujiwara
通过对熔体/晶体界面的原位观察，研究了多晶硅凝固过程中晶界小面-小面沟槽的演变。在晶体生长过程中，晶界改变了它们的传播方向，没有任何新的晶粒形成或晶界相互作用。我们监测熔体/晶体界面随着时间的推移，仔细估计两个方面的生长速度。我们发现，在我们的一些实验观察的小面速度是不同的，随机晶界的发展是强烈依赖于小面速度。在实验观察的基础上，我们从两个方面的生长速度出发，讨论了凝固过程中随机晶界的方向。
The evolution of the facet-facet groove at grain boundaries in multi-crystalline Si during solidification was investigated byin situobservation of the melt/crystal interface. The grain boundaries changed their propagation direction without any new grain formation or grain boundaries interaction during crystal growth. We monitored the melt/crystal interface over time and carefully estimated the growth velocities on two facets. We found that the facet velocities are different in some of our experimental observations and the development of random grain boundary is strongly dependent on the facet velocities. On the basis of our experimental observations, we discussed the direction of random grain boundary during solidification by considering the growth velocities on two facets.