Sputtering and in-plane texture control during the deposition of MgO
Sputtering and in-plane texture control during the deposition of MgO
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DOI：
10.1063/1.1354650
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发表时间：
2001-03
影响因子：
3.2
通讯作者：
Liang Dong;L. Zepeda-Ruiz;D. Srolovitz
中科院分区：
文献类型：
--
作者：
Liang Dong;L. Zepeda-Ruiz;D. Srolovitz
采用分子动力学模拟方法研究了离子束辅助沉积（IBAD）过程中离子束对MgO薄膜面内织构的影响。溅射产率被确定为Ar离子束的面内取向的函数。最小溅射产率存在于与MgO <110>方向对应的离子束方向。溅射产率最小值的有限宽度可归因于两个主要因素：（i）仅一小部分入射离子定向成直接沿通道的中心向下行进，以及（ii）不完全平行于通道方向的离子可通道化。虽然模拟意味着，它是可能的面内取向{001} MgO膜使用IBAD，有基本的限制，可以实现的程度的有序。
Molecular dynamics simulations are performed to study the fundamental role of the ion beam in determining the in-plane texture of 〈100〉 oriented (out-of-plane) MgO films during ion beam assisted deposition (IBAD). Sputter yields are determined as a function of in-plane orientation for Ar ion beams. The minimum sputter yield exists at an ion beam orientation corresponding to the MgO 〈110〉 direction. The finite width of the sputter yield minimum is attributable to two main factors: (i) only a fraction of the incident ions are oriented to travel directly down the center of the channel and (ii) ions that are not exactly parallel to the channeling direction may channel. While the simulations imply that it is possible to in-plane orient {001} MgO films using IBAD, there are fundamental limitations on the degree of ordering that can be achieved.