Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N
Observation of coreless edge and mixed dislocations in Mg-doped Al0.03Ga0.97N
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掺镁 Al0.03Ga0.97N 中无芯刃和混合位错的观察
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
F. Ponce
中科院分区：
文献类型：
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作者：
D. Cherns;Yiqian Wang;R. Liu;F. Ponce
用电子显微镜研究了重掺镁的Al0.03Ga0.97N薄膜中线状位错的核心结构。结果表明，边缘位错和混合位错具有中空的核心，直径一般为1-5 nm，而不是螺旋位错。提出了一个模型，其中空芯的形成是由镁在这些位错核处的偏析和随后的析出引起的。讨论了这对理解其它GaN薄膜中空心位错形成的意义。
Transmission electron microscopy has been used to examine the core structure of threading dislocations in heavily Mg-doped Al0.03Ga0.97N thin films. It is shown that edge and mixed, but not screw, dislocations have hollow cores with diameters typically 1–5 nm. A model is presented where hollow core formation is initiated by the segregation and subsequent precipitation of Mg at these dislocation cores. The implications for understanding the formation of hollow core dislocations in other GaN films are discussed.