In situ Transmission Electron Microscopy Observation of the Graphitization of Silicon Carbide Nanowires Induced by Joule Heating

In situ Transmission Electron Microscopy Observation of the Graphitization of Silicon Carbide Nanowires Induced by Joule Heating
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焦耳热诱导碳化硅纳米线石墨化的原位透射电子显微镜观察

DOI:
10.1143/apex.3.055001
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发表时间:
2010
影响因子:
2.3
通讯作者:
S. Ichikawa
S. Ichikawa
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
H. Kohno;Y. Mori;S. Takeda;Y. Ohno;I. Yonenaga;S. Ichikawa

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焦耳加热碳化硅纳米线导致其表面石墨化,并最终转化为严重扭曲的碳纳米管。本文用透射电镜原位观察研究了石墨化的动力学过程。该过程进行三个步骤:表面氧化物的蒸发,表面石墨烯层的形成,以及在进一步加热的情况下核心碳化硅的蒸发。
Joule heating of silicon carbide nanowires results in the graphitization on their surface, and finally in the transformation into heavily distorted nanotubes of carbon. This paper investigates the dynamics of the graphitization by means of in situ transmission electron microscopy. The process proceeds with three steps: evaporation of the surface oxide, formation of the surface graphene layers, and evaporation of the core silicon carbide with further heating.
DOI: 10.1039/b9nr00163h
发表时间: 2009-12-01
期刊: NANOSCALE
影响因子: 6.7
作者:
Kohno, Hideo;Mori, Yuhki;Takeda, Seiji
通讯作者: Takeda, Seiji
DOI: --
发表时间: 2009
期刊: Nanotechnology 20
影响因子: --
作者:
T. Nogami;Y. Ohno;S. Ichikawa;H. Kohno
通讯作者: H. Kohno