Cu-Cu Room Temperature Bonding - Current Status of Surface Activated Bonding(SAB) -
Cu-Cu Room Temperature Bonding - Current Status of Surface Activated Bonding(SAB) -
复制标题
Cu-Cu室温键合 - 表面活化键合(SAB)的现状 -
DOI：
10.1149/1.2357065
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
T. Suga
中科院分区：
文献类型：
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作者：
T. Suga
表面活化键合（SAB）是一种极具潜力的低温键合方法。这个想法是基于这样一个事实，即原子级清洁的表面是非常活跃的，易于在低温甚至室温下结合。在过去的几年中，SAB方法的工业应用已经集中在高密度电子封装、芯片上芯片配置中LSI和衬底之间的高密度互连以及用于半导体器件的3D集成的晶片上晶片键合的开发中。晶片键合现在是关注的焦点，因为没有其他工艺比SAB被发现作为一个低温工艺足够。两种新的方法键合离子晶片也介绍了克服SAB的问题，晶片键合使用纳米粘附层或顺序等离子体激活过程。
The surface activated boding (SAB) is a highly potential method providing a low temperature bonding process. The idea is base on the fact that the atomically clean surfaces are very reactive and easy to be bonded at low temperature or even at room temperature. In the past several years, industrial applications of the SAB method have been focused in development of high density electronic packaging, high density interconnect between LSI and substrate in chip on chip configuration, as well as wafer on wafer bonding for 3D integration of semiconductor devices. Wafer bonding is now the focus of interest, since no other process than SAB is found adequate as a low temperature process. Two new approached to bonding ionic wafers are also introduced to overcome the problem of SAB in wafer bonding using either a nano-adhesion layer or a sequential plasma activation process.