Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr2O3 Thin Film
Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr2O3 Thin Film
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DOI：
10.3390/magnetochemistry7030036
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发表时间：
2021-03
期刊：
影响因子：
2.7
通讯作者：
Y. Shiratsuchi;Y. Tao;K. Toyoki;R. Nakatani
中科院分区：
文献类型：
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作者：
Y. Shiratsuchi;Y. Tao;K. Toyoki;R. Nakatani
磁电效应是磁场和电场相互作用的结果，目前被认为是控制反铁磁畴态技术的一个基本原理。ME控制的AFM域状态可以通过经由交换偏置与ME AFM层耦合的相邻铁磁层的磁化读出。在该技术中，ME层厚度的减小是持续的挑战。在本文中，我们证明了ME诱导开关的交换偏置极性使用30 nm厚的ME Cr2 O3薄膜。探讨了两种典型的切换过程：ME场冷却（MEFC）模式和等温模式。MEFC模式切换所需的ME场表明ME磁化率（α33）在30 nm厚度范围内不会劣化。交换偏置的等温变化表现出相对于电场的滞后性，并且存在取决于开关方向的开关场的不对称性。对这种不对称性的定量分析得出273 K时的α33为3.7 ± 0.5 ps/m，这与大块Cr2 O3的报告值相当。
Magnetoelectric (ME) effect is a result of the interplay between magnetism and electric field and now, it is regarded as a principle that can be applied to the technique of controlling the antiferromagnetic (AFM) domain state. The ME-controlled AFM domain state can be read out by the magnetization of the adjacent ferromagnetic layer coupled with the ME AFM layer via exchange bias. In this technique, the reduction in the ME layer thickness is an ongoing challenge. In this paper, we demonstrate the ME-induced switching of exchange bias polarity using the 30-nm thick ME Cr2O3 thin film. Two typical switching processes, the ME field cooling (MEFC) and isothermal modes, are both explored. The required ME field for the switching in the MEFC mode suggests that the ME susceptibility (α33) is not deteriorated at 30 nm thickness regime. The isothermal change of the exchange bias shows the hysteresis with respect to the electric field, and there is an asymmetry of the switching field depending on the switching direction. The quantitative analysis of this asymmetry yields α33 at 273 K of 3.7 ± 0.5 ps/m, which is comparable to the reported value for the bulk Cr2O3.