Rapid thermal annealing of GaNxAs1-x grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence
Rapid thermal annealing of GaNxAs1-x grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence
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DOI：
10.1063/1.1454193
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发表时间：
2002-03
影响因子：
3.2
通讯作者：
W. Loke;S. Yoon;S. Wang;T. K. Ng;W. Fan
中科院分区：
文献类型：
--
作者：
W. Loke;S. Yoon;S. Wang;T. K. Ng;W. Fan
利用低温光致发光（PL）和高分辨X射线衍射（HR-XRD）研究了快速热退火（RTA）对射频等离子体辅助固体源分子束外延GaAs（100）衬底上生长的GaNAs薄膜的影响。用动态衍射理论对x射线摇摆曲线进行了实验曲线拟合，确定了氮含量为1.3%和2.2%的GaNAs样品，当在525- 200 ℃进行RTA时，在PL光谱中显示出67.7 meV的能量的总体蓝移和42.2 meV的中间红移。结果表明，除了氮原子的纯向外扩散之外，GaNAs层还可能经历了中间的替代-间隙扩散。在700-750 °C下退火的样品与生长态样品相比显示出积分PL强度的1.7-2.1倍提高和PL半峰全宽的1.6-1.8倍降低。HR-XRD结果表明，在不同的掺杂浓度下，GaNAs的晶格常数没有明显变化。
The effect of rapid thermal annealing (RTA) on GaNAs films grown on GaAs (100) substrates by radio frequency plasma-assisted solid source molecular beam epitaxy was investigated by low-temperature photoluminescence (PL) and high-resolution x-ray diffraction (HR-XRD) measurements. GaNAs samples with N content of 1.3% and 2.2% determined by experimental curve fitting of x-ray rocking curve with the dynamical diffraction theory, exhibit an overall blueshift in energy of 67.7 meV and an intermediate redshift of 42.2 meV in the PL spectra when subjected to RTA at 525–850 °C for 10 min. The results suggest that the GaNAs layer may have undergone an intermediate substitutional–interstitial diffusion in addition to purely outdiffusion of nitrogen atoms. Samples annealed at 700–750 °C showed 1.7–2.1 times improvement in integrated PL intensity and 1.6–1.8 times reduction in PL full width half maximum as compared to the as-grown sample. The HR-XRD results show no significant changes in GaNAs lattice parameter betwe...