Silicon photonic waveguide metrology using Mach-Zehnder interferometers.

Silicon photonic waveguide metrology using Mach-Zehnder interferometers.
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使用马赫-曾德尔干涉仪进行硅光子波导计量。

DOI:
10.1364/oe.24.006265
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发表时间:
2016
期刊:
影响因子:
3.8
通讯作者:
C. Kopp
C. Kopp
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
C. Oton;C. Manganelli;F. Bontempi;M. Fournier;D. Fowler;C. Kopp

文献摘要

被引文献

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在硅光子学技术中,我们提出了一种表征芯片内部和晶圆中不同芯片之间制造偏差的方法。特别是,SOI厚度和波导宽度偏差的独立测量可以通过晶圆进行映射,从而可以精确且无损地表征这些变化如何沿晶圆表面分布。这些偏差对于大多数依赖波长的集成器件来说是至关重要的,比如微环谐振器、滤波器等。我们还表明,该技术允许表征接近效应。
We propose a procedure for characterizing fabrication deviations within a chip and among different chips in a wafer in silicon photonics technology. In particular, independent measurements of SOI thickness and waveguide width deviations can be mapped through the wafer, allowing a precise and non-destructive characterization of how these variations are distributed along the surface of the wafer. These deviations are critical for most wavelength-dependent integrated devices, like microring resonators, filters, etc. We also show that the technique allows for the characterization of proximity effects.