Impact of air‐light exposure on the electrical properties of Cu(In,Ga)Se2 solar cells
Impact of air‐light exposure on the electrical properties of Cu(In,Ga)Se2 solar cells
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空气光照射对 Cu(In,Ga)Se2 太阳能电池电性能的影响
DOI：
10.1002/pip.3041
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发表时间：
2018
影响因子：
6.7
通讯作者：
R. Scheer
中科院分区：
文献类型：
--
作者：
Torsten Hölscher;T. Schneider;Matthias Maiberg;R. Scheer
通过测量完整太阳能电池的性能，研究了空气光暴露对裸Cu(In,Ga)Se2层的影响。在开路电压、填充系数和效率方面，与非照明吸收器形成的太阳能电池相比，由空气光暴露吸收器形成的太阳能电池的电池参数差约10%。时间依赖和温度依赖的开路电压测量给出了裸露吸收体暴露在空气光下的太阳能电池损伤是由于界面重组引起的原因。用导纳光谱法检测界面状态。热光浸泡完整的太阳能电池-具有先前降解的界面-将太阳能电池参数恢复到未降解的水平。矛盾的是，光诱导裸吸收剂的降解和光退火后电池参数的修正都伴随着光诱导的钠在Cu(In,Ga)Se2表面和Cu(In,Ga)Se2/CdS界面上的偏析。
The impact of air‐light exposure of bare Cu(In,Ga)Se2 layers is investigated by measuring the performance of completed solar cells. Solar cells formed from air‐light–exposed absorbers reveal inferior cell parameters by about 10% regarding open circuit voltage, fill factor, and efficiency compared with cells from nonilluminated absorbers. Time‐dependent and temperature‐dependent open circuit voltage measurements give reasons that the solar cell impairment by air‐light exposure of the bare absorbers is due to interface recombination. Interface states are detected by admittance spectroscopy. Heat‐light soaking of complete solar cells—having formerly degraded interfaces—recovers the solar cell parameters up to the nondegraded levels. Paradoxically, both the air‐light–induced degradation of bare absorbers and the revision of cell parameters after light annealing go along with a light‐induced segregation of sodium at the Cu(In,Ga)Se2 surface and Cu(In,Ga)Se2/CdS interface, respectively.