STM characterization of the Si-P heterodimer
STM characterization of the Si-P heterodimer
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DOI：
10.1103/physrevb.69.195303
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发表时间：
2004-05-01
影响因子：
3.7
通讯作者：
Clark, RG
中科院分区：
文献类型：
--
作者：
Curson, NJ;Schofield, SR;Clark, RG
我们使用扫描隧道显微镜（STM）和俄歇电子能谱研究了吸附磷化氢（PH3）在Si（001）上的行为，作为退火温度的函数，特别关注了Si- p异质二聚体的形成。在Si（001）表面添加接近0.002 langmuir的PH3会导致PHx （x=2,3）吸附在表面上，并蚀刻Si以形成单独的Si添加二聚体。退火至350度时，P进入表面层形成Si-P异源二聚体，并形成短的一维Si二聚体链和单氢化物。在填充态STM图像中，孤立的Si-P异二聚体在表面呈现锯齿状特征，这是由于异二聚体引起的静态二聚体屈曲。在一氢化物的适度覆盖下，这种静态屈曲被解除，使Si-P异二聚体在填充态图像中不可见。然而，我们发现我们可以在所有H覆盖下使用空态成像来成像异二聚体。识别Si（001）中的单个P原子的能力对于基于可控原子尺度Si掺杂的纳米级电子器件的开发将是无价的。
We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH3) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P heterodimer. Dosing the Si(001) surface with similar to0.002 langmuirs of PH3 results in the adsorption of PHx (x=2,3) onto the surface and etching of Si to form individual Si ad-dimers. Annealing to 350 degreesC results in the incorporation of P into the surface layer to form Si-P heterodimers and the formation of short one-dimensional Si dimer chains and monohydrides. In filled state STM images, isolated Si-P heterodimers appear as zigzag features on the surface due to the static dimer buckling induced by the heterodimer. In the presence of a moderate coverage of monohydrides this static buckling is lifted, rending the Si-P heterodimers invisible in filled state images. However, we find that we can image the heterodimer at all H coverages using empty state imaging. The ability to identify single P atoms incorporated into Si(001) will be invaluable in the development of nanoscale electronic devices based on controlled atomic-scale doping of Si.