Electronic Band Structure for SmOs4Sb12
Electronic Band Structure for SmOs4Sb12
复制标题
SmOs4Sb12 的电子能带结构
DOI：
10.1143/jpsjs.77sa.193
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发表时间：
2008
影响因子：
1.7
通讯作者：
H. Harima
中科院分区：
文献类型：
--
作者：
K. Takegahara;H. Harima
用FLAPW方法计算了smos4sb12及其参考化合物lao4sb12的电子能带结构。结果表明，Sm离子具有中间价态，但计算的索默菲尔德系数约为观测值的1/20，表明存在强相关电子效应。
The electronic band structures are calculated for SmOs 4 Sb 12 and its reference compound LaOs 4 Sb 12 , by using an FLAPW method. The result reveals that the Sm ions have the intermediate valence but the calculated Sommerfeld coefficient is about 1/20 of the observed value indicating the strongly correlated electron effects.