SJ/RESURF LDMOST
SJ/RESURF LDMOST
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DOI：
10.1109/ted.2004.829876
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发表时间：
2004-06
影响因子：
3.1
通讯作者：
S.G. Nassif-Khalil;Li Zhang Hou;C.A.T. Salama
中科院分区：
文献类型：
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作者：
S.G. Nassif-Khalil;Li Zhang Hou;C.A.T. Salama
提出了一种基于超结（SJ）概念的单片横向双扩散MOSFET（LDMOST），以显著改善器件的通态和关态特性。该器件结构的特征在于由两部分构成的分裂漂移区：1）在漂移区的大部分上延伸的SJ结构，以及2）占据漂移区的邻近n/sup +/漏极的部分的终止减小表面场（RESURF）区。该结构抑制了衬底辅助耗尽效应，并确保了完全耗尽和在整个漂移区上的接近均匀的电场分布。在导通状态下，SJ漂移区的高导电性导致对于给定击穿电压（BV）的比导通电阻的显著改善，并且因此导致导通状态、开关和栅极驱动损耗的降低。在关断状态下，位于n/sup +/漏极附近的RESURF区有效地中和了衬底辅助耗尽效应并导致高BV。
A monolithic lateral double diffused MOSFET (LDMOST) based on the super junction (SJ) concept is proposed to significantly improve the device's on-state and off-state characteristics. The device structure features a split drift region made of two parts: 1) an SJ structure that extends over most of the drift region and 2) a terminating reduced surface field (RESURF) region occupying a portion of the drift region adjacent to the n/sup +/ drain. This structure suppresses substrate-assisted depletion effects and ensures complete depletion and near uniform electric field distribution over the entire drift region. In the on-state, the high conductivity of the SJ drift region results in a significant improvement in the specific on-resistance for a given breakdown voltage (BV) and, hence, a reduction in the on-state, switching, and gate-drive losses. In the off-state, the RESURF region, located near the n/sup +/ drain, effectively neutralizes the substrate-assisted depletion effects and results in high BV.