Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells
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DOI：
10.1063/1.4765068
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发表时间：
2012-10
影响因子：
4
通讯作者：
J. R. Lang;N. Young;R. Farrell;Yuh‐Renn Wu;J. Speck
中科院分区：
文献类型：
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作者：
J. R. Lang;N. Young;R. Farrell;Yuh‐Renn Wu;J. Speck
研究了InGaN/GaN多量子阱太阳电池器件中不同势垒厚度对量子阱载流子逃逸特性的影响。光电流对外加偏压和温度的依赖关系表现出热离子发射和隧穿的量子阱载流子逃逸机制，对于薄势垒和高场，隧穿占主导地位。使用自洽漂移扩散和薛定谔解算器的模拟计算得到了载流子逃逸寿命。通过使用足够薄的势垒，可以使逃逸寿命比复合寿命更小，从而导致高的内部量子效率。
The properties of quantum well carrier escape were studied by varying barrier thicknesses in InGaN/GaN multi-quantum well solar cell devices. The dependence of the photocurrent on applied bias and temperature exhibited properties indicative of the quantum well carrier escape mechanisms of thermionic emission and tunneling, with tunneling dominating for thin barriers and high fields. Simulations using a self-consistent drift-diffusion and Schrodinger solver with analytical formulas extracted carrier escape lifetimes. By employing sufficiently thin barriers, it was found that escape lifetimes can be made small compared to recombination lifetimes, leading to high internal quantum efficiency.