W nucleation on TiN from WF6 and SiH4
W nucleation on TiN from WF6 and SiH4
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W 在 WF6 和 SiH4 的 TiN 上成核
DOI：
10.1116/1.579280
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
D. Danielson
中科院分区：
文献类型：
--
作者：
S. L. Lantz;A. Bell;W. Ford;D. Danielson
本文研究了反应离子溅射TiN表面与WF_6和SiH_4的化学反应。利用俄歇电子能谱原位研究了300 ~ 550 °C的表面反应。O和C表面污染的影响，由于大气暴露的特点和比较是在真空中溅射清洗基板。WF 6 +TiN反应在所研究的温度范围内表现出线性生长速率。TiN表面氧化使初始WF 6反应几率从0.08降低到<0.1，有效活化能从0.04增加到0.62 eV。表面C对反应没有影响。提出了一个简单的动力学模型，描述了清洁或氧化TiN表面上的W的吸收。TiN暴露于SiH 4导致Si的沉积，反应概率为10−4。俄歇峰形状表明Si在氧化的TiN表面上与O键合，并且在溅射清洁的TiN上以SiN的形式键合。当TiN第一次曝光时，
The chemical reactions of WF6 and SiH4 with reactive ion sputtered TiN surfaces have been studied in ultrahigh vacuum. Auger electron spectroscopy was used in situ to study the surface reactions from 300 to 550 °C. The effects of O and C surface contamination due to atmospheric exposure are characterized and comparisons are made to substrates sputter cleaned in vacuo. The WF6+TiN reaction exhibits linear growth rates over the range of temperatures studied. TiN surface oxidation reduces the initial WF6 reaction probability from ∼0.8 to <0.1, and increases the effective activation energy from 0.04 to 0.62 eV. Surface C has no effect on the reaction. A simple kinetic model is presented that describes the uptake of W on either clean or oxidized TiN surfaces. The exposure of TiN to SiH4 results in the deposition of Si with a reaction probability of ∼10−4. Auger peak shapes indicate that Si is bonded to O on oxidized TiN surfaces and elementally or as SiN on sputter cleaned TiN. When the TiN was exposed first t...