Influence of thermal annealing on electrical and optical properties of indium tin oxide thin films
Influence of thermal annealing on electrical and optical properties of indium tin oxide thin films
复制标题
热退火对氧化铟锡薄膜电学和光学性能的影响
DOI：
10.1016/j.mssp.2014.05.026
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发表时间：
2014-10-01
影响因子：
4.1
通讯作者：
Zheng, Youdou
中科院分区：
文献类型：
--
作者：
Xu, Zhou;Chen, Peng;Zheng, Youdou
采用电子束蒸发法在石英衬底上制备了厚度为300 nm的透明导电氧化铟锡(ITO)薄膜，其中5种薄膜在空气气氛中分别在200℃~600℃的5个温度点进行了10min的后退火处理。采用紫外-可见分光光度计和霍尔测量系统对ITO薄膜进行了表征。详细研究了空气气氛中热退火对薄膜电学和光学性能的影响。300℃下退火后，方块电阻最小，为6.67欧加/平方英尺，在更高的温度下，方阻急剧增加。400℃热处理后，薄膜在400~800 nm范围内的平均透过率达到最大值89.03%，优值系数达到17.79(单位：10(-3)欧米伽(-1))。随着热处理温度从400℃升高到600℃，透过率的变化不大，但由于电导率的恶化，优值系数显著下降。随着退火温度的升高，吸收边向长波方向移动。这可以用Burstein-Moss位移来解释。光学带隙在3.866-4.392 eV范围内变化。(C)2014爱思唯尔有限公司。保留所有权利。
Transparent conducting indium tin oxide (ITO) thin films with the thickness of 300 nm were deposited on quartz substrates via electron beam evaporation, and five of them post-annealed in air atmosphere for 10 min at five selected temperature points from 200 degrees C to 600 degrees C, respectively. An UV-vis spectrophotometer and Hall measurement system were adopted to characterize the ITO thin films. Influence of thermal annealing in air atmosphere on electrical and optical properties was investigated in detail. The sheet resistance reached the minimum of 6.67 Omega/sq after annealed at 300 degrees C. It increased dramatically at even higher annealing temperature. The mean transmittance over the range from 400 nm to 800 nm reached the maximum of 89.03% after annealed at 400 degrees C, and the figure of merit reached the maximum of 17.79 (Unit: 10(-3) Omega(-1)) under the same annealing condition. With the annealing temperature increased from 400 degrees C to 600 degrees C, the variations of transmittance were negligible, but the figure of merit decreased significantly due to the deterioration of electrical conductivity. With increasing the annealing temperature, the absorption edge shifted towards longer wavelength. It could be explained on the basis of Burstein-Moss shift. The values of optical band gap varied in the range of 3.866-4.392 eV. (C) 2014 Elsevier Ltd. All rights reserved.