Charge state effect on near-surface damage formation in swift heavy ion irradiated InP
Charge state effect on near-surface damage formation in swift heavy ion irradiated InP
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DOI：
10.1063/1.1938279
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发表时间：
2005-06
影响因子：
3.2
通讯作者：
A. Kamarou;E. Wendler;W. Wesch
中科院分区：
文献类型：
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作者：
A. Kamarou;E. Wendler;W. Wesch
用大通量的快重离子 (SHI) 照射单晶 InP 会导致在主要电子能量损失的深度范围内形成非晶层。然而，与本体不同的是，薄的表面层（数十纳米）几乎未受损。在本论文中，对这一特性进行了更详细的研究。人们可以做出两种看似合理的假设：(a) 表面充当表面附近 SHI 辐射产生的缺陷的有效接收器（即，它们向表面移动并在那里湮灭），或 (b) 薄表面层内的 SHI 能量沉积低于本体中的能量沉积。例如，如果撞击离子的初始电荷低于目标块体中的平均平衡电荷，就会发生后一种效应。我们的结果表明 SHI 电荷态的主导影响。没有观察到表面作为缺陷汇的明显影响。
Irradiation of single-crystalline InP with large fluences of swift heavy ions (SHI’s) causes formation of amorphous layers within the depth range of dominating electronic energy loss. However, unlike the bulk, a thin surface layer (tens of nanometers) remains almost undamaged. In the present paper this peculiarity is studied in more detail. One can make two plausible suppositions: (a) either the surface acts as an efficient sink for defects produced by SHI irradiation near the surface (i.e., they move towards the surface and annihilate there) or (b) SHI energy deposition within the thin surface layer is lower than that in the bulk. The latter effect takes place, for example, if the initial charge of the impinging ions is lower than the mean equilibrium one in the target bulk. Our results give an indication of a dominating influence of the SHI charge state. No noticeable influence of the surface as a sink for defects was observed.