Modeling of negative bias temperature instability
Modeling of negative bias temperature instability
复制标题
负偏压温度不稳定性建模
DOI：
10.26636/jtit.2007.2.814
复制
发表时间：
2023
影响因子：
--
通讯作者：
S. Selberherr
中科院分区：
文献类型：
--
作者：
T. Grasser;S. Selberherr
负偏置温度不稳定性被认为是高度缩放PMOS晶体管的最重要的可靠性问题之一。由于半导体器件的不断缩小，由于氧化物中的高电场和氮的常规掺入，这个问题在过去几年中变得更加重要。在负偏置温度应力期间，观察到PMOS晶体管的重要参数（诸如阈值电压、亚阈值斜率和迁移率）的偏移。建模工作可以追溯到30年前由Jeppson和Svensson提出的反应扩散模型，该模型自那时以来一直在不断改进。虽然反应扩散模型能够解释许多实验观察到的特性，一些微观细节仍然没有得到很好的理解。最近，人们提出了各种不同的解释，其中一些是扩展的，其中一些与标准的反应扩散模型相矛盾。我们回顾这些解释，特别关注建模问题。
Negative bias temperature instability is regarded as one of the most important reliability concerns of highly scaled PMOS transistors. As a consequence of the continuous downscaling of semiconductor devices this issue has become even more important over the last couple of years due to the high electric fields in the oxide and the routine incorporation of nitrogen. During negative bias temperature stress a shift in important parameters of PMOS transistors, such as the threshold voltage, subthreshold slope, and mobility is observed. Modeling efforts date back to the reaction-diffusion model proposed by Jeppson and Svensson thirty years ago which has been continuously refined since then. Although the reaction-diffusion model is able to explain many experimentally observed characteristics, some microscopic details are still not well understood. Recently, various alternative explanations have been put forward, some of them extending, some of them contradicting the standard reaction-diffusion model. We review these explanations with a special focus on modeling issues.